Infineon IMBG120R350M1HXTMA1 IGBT Module, 4.7 A TO-263
- RS-stocknr.:
- 258-3757
- Fabrikantnummer:
- IMBG120R350M1HXTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 4,61
(excl. BTW)
€ 5,58
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 4,61 |
| 10 - 24 | € 4,10 |
| 25 - 49 | € 3,88 |
| 50 - 99 | € 3,60 |
| 100 + | € 3,32 |
*prijsindicatie
- RS-stocknr.:
- 258-3757
- Fabrikantnummer:
- IMBG120R350M1HXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 4.7A | |
| Maximum Power Dissipation Pd | 65W | |
| Package Type | TO-263 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 4.7A | ||
Maximum Power Dissipation Pd 65W | ||
Package Type TO-263 | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
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