Infineon IHW30N110R5XKSA1 IGBT, 30 A 1.1 kV, 3-Pin TO-247
- RS-stocknr.:
- 260-1052
- Fabrikantnummer:
- IHW30N110R5XKSA1
- Fabrikant:
- Infineon
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€ 4,08
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€ 4,94
(incl. BTW)
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- Plus verzending 135 stuk(s) vanaf 09 november 2026
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Aantal stuks | Per stuk | Bespaar |
|---|---|---|
| 1 - 9 | € 4,08 | - |
| 10 - 24 | € 3,70 | 9% |
| 25 - 49 | € 3,42 | 16% |
| 50 - 99 | € 3,18 | 22% |
| 100 + | € 2,92 | 28% |
*prijsindicatie
- RS-stocknr.:
- 260-1052
- Fabrikantnummer:
- IHW30N110R5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 1.1kV | |
| Maximum Power Dissipation Pd | 330W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Switching Speed | 60kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | 25 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 21.1mm | |
| Standards/Approvals | RoHS Compliant | |
| Length | 16.13mm | |
| Height | 41.42mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 1.1kV | ||
Maximum Power Dissipation Pd 330W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Switching Speed 60kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO 25 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 21.1mm | ||
Standards/Approvals RoHS Compliant | ||
Length 16.13mm | ||
Height 41.42mm | ||
Automotive Standard No | ||
The Infineon IGBTs is a package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using single-ended resonant topology. It consist of a best product performances and high compatibility.
Lowest power dissipation
Better thermal management for higher reliability
Optimized for switching frequency
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