Infineon FP50R12KT3BOSA1 IGBT Module, 75 A 1200 V Module, Panel
- RS-stocknr.:
- 273-7402
- Fabrikantnummer:
- FP50R12KT3BOSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 273-7402
- Fabrikantnummer:
- FP50R12KT3BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 280W | |
| Package Type | Module | |
| Mount Type | Panel | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 125°C | |
| Length | 122mm | |
| Standards/Approvals | EN61140, IEC61140 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 280W | ||
Package Type Module | ||
Mount Type Panel | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 125°C | ||
Length 122mm | ||
Standards/Approvals EN61140, IEC61140 | ||
Automotive Standard No | ||
The Infineon IGBT module has 1200V collector emitter voltage and 50A continuous DC collector current. It has copper base plate for optimized heat spread and low stray inductance module design. This IGBT module available with fast TRENCHSTOP IGBT3 and NTC.
Thermal resistance
High reliability
High power density
Low switching losses
Compact module concept