STMicroelectronics STGD4H60DF Single Collector IGBT, 4 A 600 V, 3-Pin TO-252, Surface

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Verpakkingsopties
RS-stocknr.:
287-7045
Fabrikantnummer:
STGD4H60DF
Fabrikant:
STMicroelectronics
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STMicroelectronics

Maximum Continuous Collector Current Ic

4A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

75W

Number of Transistors

1

Package Type

TO-252

Configuration

Single Collector

Mount Type

Surface

Pin Count

3

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

175°C

Height

2.3mm

Length

1.7mm

Width

6.7 mm

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
CN
The STMicroelectronics Trench gate field stop is an IGBT developed using an Advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Low thermal resistance

Short circuit rated

Soft and fast recovery antiparallel diode

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