STMicroelectronics STGF6NC60HD, Type N-Channel IGBT, 7 A 600 V, 3-Pin TO-220FP, Through Hole
- RS-stocknr.:
- 795-8981
- Fabrikantnummer:
- STGF6NC60HD
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 7,44
(excl. BTW)
€ 9,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 10 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 20 stuk(s) vanaf 26 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 1,488 | € 7,44 |
| 25 - 45 | € 1,414 | € 7,07 |
| 50 - 120 | € 1,272 | € 6,36 |
| 125 - 245 | € 1,148 | € 5,74 |
| 250 + | € 1,088 | € 5,44 |
*prijsindicatie
- RS-stocknr.:
- 795-8981
- Fabrikantnummer:
- STGF6NC60HD
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 7A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 56W | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 16.4mm | |
| Length | 10.4mm | |
| Standards/Approvals | JEDEC JESD97 | |
| Width | 4.6 mm | |
| Series | Powermesh | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 7A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 56W | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 150°C | ||
Height 16.4mm | ||
Length 10.4mm | ||
Standards/Approvals JEDEC JESD97 | ||
Width 4.6 mm | ||
Series Powermesh | ||
Automotive Standard No | ||
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Gerelateerde Links
- STMicroelectronics STGF6NC60HD IGBT 3-Pin TO-220FP, Through Hole
- STMicroelectronics STGF14NC60KD IGBT 3-Pin TO-220FP, Through Hole
- STMicroelectronics STGF10NC60KD IGBT 3-Pin TO-220FP, Through Hole
- STMicroelectronics STGF20H60DF IGBT 3-Pin TO-220FP, Through Hole
- STMicroelectronics STGF10NB60SD IGBT 3-Pin TO-220FP, Through Hole
- STMicroelectronics STGF15H60DF IGBT 3-Pin TO-220FP, Through Hole
- STMicroelectronics STGF7NB60SL IGBT 3-Pin TO-220FP, Through Hole
- STMicroelectronics STGF3NC120HD IGBT 3-Pin TO-220FP, Through Hole