STMicroelectronics, Type N-Channel IGBT, 7 A 600 V, 3-Pin TO-220FP, Through Hole
- RS-stocknr.:
- 168-7722
- Fabrikantnummer:
- STGF6NC60HD
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 50 eenheden)*
€ 35,50
(excl. BTW)
€ 43,00
(incl. BTW)
Voeg 150 eenheden toe voor gratis bezorging
Tijdelijk niet op voorraad
- Verzending vanaf 19 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 - 50 | € 0,71 | € 35,50 |
| 100 - 200 | € 0,675 | € 33,75 |
| 250 - 450 | € 0,607 | € 30,35 |
| 500 + | € 0,604 | € 30,20 |
*prijsindicatie
- RS-stocknr.:
- 168-7722
- Fabrikantnummer:
- STGF6NC60HD
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 7A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 56W | |
| Package Type | TO-220FP | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 4.6 mm | |
| Series | Powermesh | |
| Standards/Approvals | JEDEC JESD97 | |
| Length | 10.4mm | |
| Height | 16.4mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 7A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 56W | ||
Package Type TO-220FP | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Operating Temperature 150°C | ||
Width 4.6 mm | ||
Series Powermesh | ||
Standards/Approvals JEDEC JESD97 | ||
Length 10.4mm | ||
Height 16.4mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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