STMicroelectronics, Type N-Channel IGBT, 40 A 650 V, 3-Pin TO-220FP, Through Hole

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Subtotaal (1 tube van 50 eenheden)*

€ 66,20

(excl. BTW)

€ 80,10

(incl. BTW)

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Aantal stuks
Per stuk
Per tube*
50 - 50€ 1,324€ 66,20
100 - 200€ 1,288€ 64,40
250 - 450€ 1,253€ 62,65
500 - 950€ 1,222€ 61,10
1000 +€ 1,191€ 59,55

*prijsindicatie

RS-stocknr.:
204-9871
Fabrikantnummer:
STGF20H65DFB2
Fabrikant:
STMicroelectronics
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STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

45W

Package Type

TO-220FP

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Width

16.4 mm

Length

10.4mm

Height

4.6mm

Series

STG

Automotive Standard

No

Land van herkomst:
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C

Low VCE(sat) = 1.65 V (typ.) @ IC = 20 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

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