IXYS IXYX100N120C3, Type N-Channel high Speed IGBT, 100 A 1200 V, 3-Pin PLUS247, Through Hole
- RS-stocknr.:
- 808-0225
- Fabrikantnummer:
- IXYX100N120C3
- Fabrikant:
- IXYS
Subtotaal (1 eenheid)*
€ 27,11
(excl. BTW)
€ 32,80
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 27,11 |
*prijsindicatie
- RS-stocknr.:
- 808-0225
- Fabrikantnummer:
- IXYX100N120C3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | high Speed IGBT | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1150W | |
| Package Type | PLUS247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 50kHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | International Standard Packages | |
| Series | 1200V XPTTM IGBTs GenX3TM | |
| Length | 20.32mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type high Speed IGBT | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1150W | ||
Package Type PLUS247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 50kHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.5V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals International Standard Packages | ||
Series 1200V XPTTM IGBTs GenX3TM | ||
Length 20.32mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat)
Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage
Short circuit capability for 10usec
Positive on-state voltage temperature coefficient
Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes
International standard and proprietary high voltage packages
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.