IXYS, Type N-Channel high Speed IGBT, 82 A 1200 V, 3-Pin PLUS264, Through Hole

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Subtotaal (1 tube van 25 eenheden)*

€ 404,90

(excl. BTW)

€ 489,925

(incl. BTW)

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  • Verzending vanaf 05 februari 2027
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Aantal stuks
Per stuk
Per tube*
25 +€ 16,196€ 404,90

*prijsindicatie

RS-stocknr.:
920-1003
Fabrikantnummer:
IXYB82N120C3H1
Fabrikant:
IXYS
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Merk

IXYS

Product Type

high Speed IGBT

Maximum Continuous Collector Current Ic

82A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

1040W

Package Type

PLUS264

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

50kHz

Maximum Collector Emitter Saturation Voltage VceSAT

3.2V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

±20 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Series

Planar

Automotive Standard

No

Land van herkomst:
US

IGBT Discretes, IXYS XPT series


The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.

High power density and low VCE(sat)

Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage

Short circuit capability for 10usec

Positive on-state voltage temperature coefficient

Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes

International standard and proprietary high voltage packages

IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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