Infineon FS75R12KT4B15BOSA1, N-Channel 3 Phase Bridge IGBT Module, 75 A 1.2 kV, 28-Pin ECONO2, PCB
- RS-stocknr.:
- 838-6860
- Fabrikantnummer:
- FS75R12KT4B15BOSA1
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 838-6860
- Fabrikantnummer:
- FS75R12KT4B15BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | N | |
| Configuration | 3 Phase Bridge | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current (Ic) | 75 A | |
| Maximum Collector Emitter Voltage (Vceo) | 1.2 kV | |
| Pin Count | 28 | |
| Package Type | ECONO2 | |
| Mount Type | PCB | |
| Height | 17 mm | |
| Length | 107.5 mm | |
| Maximum Gate Emitter Voltage (VGEO) | 20 V | |
| Maximum Operating Temperature | 150 °C | |
| Minimum Operating Temperature | -40 °C | |
| Width | 45 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type N | ||
Configuration 3 Phase Bridge | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current (Ic) 75 A | ||
Maximum Collector Emitter Voltage (Vceo) 1.2 kV | ||
Pin Count 28 | ||
Package Type ECONO2 | ||
Mount Type PCB | ||
Height 17 mm | ||
Length 107.5 mm | ||
Maximum Gate Emitter Voltage (VGEO) 20 V | ||
Maximum Operating Temperature 150 °C | ||
Minimum Operating Temperature -40 °C | ||
Width 45 mm | ||
IGBT Modules, Infineon
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies.
The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBT’s can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives.
Package styles include: 62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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