Fairchild ISL9V3040P3 IGBT, 21 A 450 V, 3-Pin TO-220AB, Through Hole
- RS-stocknr.:
- 862-9359P
- Fabrikantnummer:
- ISL9V3040P3
- Fabrikant:
- Fairchild Semiconductor
Bulkkorting beschikbaar
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€ 24,04
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€ 29,09
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- Plus verzending 1.150 stuk(s) vanaf 30 december 2025
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Aantal stuks | Per stuk |
|---|---|
| 10 - 95 | € 2,404 |
| 100 - 495 | € 1,974 |
| 500 - 995 | € 1,662 |
| 1000 + | € 1,464 |
*prijsindicatie
- RS-stocknr.:
- 862-9359P
- Fabrikantnummer:
- ISL9V3040P3
- Fabrikant:
- Fairchild Semiconductor
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Fairchild Semiconductor | |
| Maximum Continuous Collector Current | 21 A | |
| Maximum Collector Emitter Voltage | 450 V | |
| Maximum Gate Emitter Voltage | ±14V | |
| Maximum Power Dissipation | 150 W | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.67 x 4.7 x 16.3mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -40 °C | |
| Alles selecteren | ||
|---|---|---|
Merk Fairchild Semiconductor | ||
Maximum Continuous Collector Current 21 A | ||
Maximum Collector Emitter Voltage 450 V | ||
Maximum Gate Emitter Voltage ±14V | ||
Maximum Power Dissipation 150 W | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.67 x 4.7 x 16.3mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -40 °C | ||
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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