Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	Ignition IGBT
	Maximum Continuous Collector Current Ic	21A
	Maximum Collector Emitter Voltage Vceo	430V
	Maximum Power Dissipation Pd	150W
	Package Type	TO-252
	Mount Type	Surface
	Channel Type	Type N
	Pin Count	3
	Switching Speed	1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT	2.2V
	Minimum Operating Temperature	-40°C
	Maximum Gate Emitter Voltage VGEO	±10 V
	Maximum Operating Temperature	175°C
	Series	EcoSPARK
	Standards/Approvals	RoHS
	Energy Rating	300mJ
	Automotive Standard	AEC-Q101

	Alles selecteren
	Merk onsemi
	Product Type Ignition IGBT
	Maximum Continuous Collector Current Ic 21A
	Maximum Collector Emitter Voltage Vceo 430V
	Maximum Power Dissipation Pd 150W
	Package Type TO-252
	Mount Type Surface
	Channel Type Type N
	Pin Count 3
	Switching Speed 1MHz
	Maximum Collector Emitter Saturation Voltage VceSAT 2.2V
	Minimum Operating Temperature -40°C
	Maximum Gate Emitter Voltage VGEO ±10 V
	Maximum Operating Temperature 175°C
	Series EcoSPARK
	Standards/Approvals RoHS
	Energy Rating 300mJ
	Automotive Standard AEC-Q101

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

onsemi, Type N-Channel Ignition IGBT, 21 A 430 V, 3-Pin TO-252, Surface

Discrete IGBTs, Fairchild Semiconductor

IGBT Discretes & Modules, Fairchild Semiconductor

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