STMicroelectronics SuperMESH Dual N-Channel MOSFET, 0.4 A, 450 V Enhancement, 8-Pin SO-8 STS1DNC45
- RS-stocknr.:
- 151-447
- Fabrikantnummer:
- STS1DNC45
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 15,36
(excl. BTW)
€ 18,59
(incl. BTW)
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 1,536 | € 15,36 |
| 100 - 240 | € 1,459 | € 14,59 |
| 250 - 490 | € 1,355 | € 13,55 |
| 500 - 990 | € 1,244 | € 12,44 |
| 1000 + | € 1,198 | € 11,98 |
*prijsindicatie
- RS-stocknr.:
- 151-447
- Fabrikantnummer:
- STS1DNC45
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Dual N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.4A | |
| Maximum Drain Source Voltage Vds | 450V | |
| Package Type | SO-8 | |
| Series | SuperMESH | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -65°C | |
| Maximum Power Dissipation Pd | 2W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 10nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Dual N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.4A | ||
Maximum Drain Source Voltage Vds 450V | ||
Package Type SO-8 | ||
Series SuperMESH | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -65°C | ||
Maximum Power Dissipation Pd 2W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 10nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics Power MOSFET developed using Super MESH technology, achieved through optimization of well established Power MESH layout. In addition to a significant reduction in on resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
Standard outline for easy automated surface mount assembly
Gate charge minimized
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