Vishay SQ4940CEY Dual N-Channel Single MOSFETs, 8 A, 40 V Enhancement, 8-Pin SO-8 SQ4940CEY-T1_GE3
- RS-stocknr.:
- 653-183
- Fabrikantnummer:
- SQ4940CEY-T1_GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 1.059,00
(excl. BTW)
€ 1.281,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 3.000 stuk(s) vanaf 12 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,353 | € 1.059,00 |
*prijsindicatie
- RS-stocknr.:
- 653-183
- Fabrikantnummer:
- SQ4940CEY-T1_GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | SO-8 | |
| Series | SQ4940CEY | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.024Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 4W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 11.2nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 5mm | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type SO-8 | ||
Series SQ4940CEY | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.024Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 4W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 11.2nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 5mm | ||
Height 1.75mm | ||
Width 4 mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The Vishay Automotive-grade Dual N-channel MOSFET designed for high-performance switching applications. It operates at 40 V drain-source voltage and can withstand temperatures up to 175 °C, making it Ideal for demanding environments. This device is built with TrenchFET technology and comes in a Compact SO-8 package.
AEC Q101 qualified
Pb Free
Halogen free
RoHS compliant
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