Vishay SI9634DY 4 Dual N-Channel MOSFET, 8 A, 60 V Enhancement, 8-Pin SO-8 SI9634DY-T1-GE3
- RS-stocknr.:
- 268-8282
- Fabrikantnummer:
- SI9634DY-T1-GE3
- Fabrikant:
- Vishay
Subtotaal (1 rol van 3000 eenheden)*
€ 933,00
(excl. BTW)
€ 1.128,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,311 | € 933,00 |
*prijsindicatie
- RS-stocknr.:
- 268-8282
- Fabrikantnummer:
- SI9634DY-T1-GE3
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Dual N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SI9634DY | |
| Package Type | SO-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 60 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, AEC-Q101, 100 percent Rg and UIS tested | |
| Number of Elements per Chip | 4 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Product Type MOSFET | ||
Channel Type Dual N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SI9634DY | ||
Package Type SO-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 60 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, AEC-Q101, 100 percent Rg and UIS tested | ||
Number of Elements per Chip 4 | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Vishay dual N channel TrenchFET 4 generation power MOSFET that is fully lead pb and halogen free device. It is optimized and ratio reduces switching related power loss and it is used in applications such as synchronous rectification, motor drive contr
ROHS compliant
UIS tested 100 percent
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