DiodesZetex Type P-Channel MOSFET, 900 mA, 20 V Enhancement, 3-Pin SOT-23 ZXM61P02FTA
- RS-stocknr.:
- 154-942
- Fabrikantnummer:
- ZXM61P02FTA
- Fabrikant:
- DiodesZetex
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 4,90
(excl. BTW)
€ 5,925
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 1.600 stuk(s) vanaf 29 december 2025
- Plus verzending 76.000 stuk(s) vanaf 05 januari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 125 | € 0,196 | € 4,90 |
| 150 - 725 | € 0,102 | € 2,55 |
| 750 - 1475 | € 0,097 | € 2,43 |
| 1500 + | € 0,08 | € 2,00 |
*prijsindicatie
- RS-stocknr.:
- 154-942
- Fabrikantnummer:
- ZXM61P02FTA
- Fabrikant:
- DiodesZetex
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 900mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 3.5nC | |
| Maximum Power Dissipation Pd | 806mW | |
| Forward Voltage Vf | -0.95V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 1.4 mm | |
| Length | 3.05mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 900mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 3.5nC | ||
Maximum Power Dissipation Pd 806mW | ||
Forward Voltage Vf -0.95V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 1.4 mm | ||
Length 3.05mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
P-Channel MOSFET, 12V to 25V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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