onsemi NDS352AP Type P-Channel MOSFET, 900 mA, 30 V Enhancement, 3-Pin SOT-23

RS-stocknr.:: 178-7591
Fabrikantnummer:: NDS352AP
Fabrikant:: onsemi

onsemi NDS352AP Type P-Channel MOSFET, 900 mA, 30 V Enhancement, 3-Pin SOT-23

Subtotaal (1 rol van 3000 eenheden)*

€ 351,00

(excl. BTW)

€ 426,00

(incl. BTW)

GRATIS bezorging voor bestellingen van meer dan € 75,00

Op voorraad

Plus verzending 3.000 stuk(s) vanaf 29 december 2025

Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.

Aantal stuks	Per stuk	Per rol*
3000 +	€ 0,117	€ 351,00

*prijsindicatie

RS-stocknr.:: 178-7591
Fabrikantnummer:: NDS352AP
Fabrikant:: onsemi

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

Zoek vergelijkbare producten door een of meer kenmerken te selecteren.

Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	900mA
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	NDS352AP
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	500mW
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	2nC
	Forward Voltage Vf	-1.2V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Height	0.94mm
	Length	2.92mm
	Width	1.4 mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id 900mA
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series NDS352AP
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 500mW
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 2nC
	Forward Voltage Vf -1.2V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Height 0.94mm
	Length 2.92mm
	Width 1.4 mm
	Automotive Standard No

Trans MOSFET P-CH 30V 0.9A 3- SuperSOT

Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:

• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.