IXYS HiperFET, Polar N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P
- RS-stocknr.:
- 194-057P
- Fabrikantnummer:
- IXFP10N80P
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal 5 eenheden (geleverd in een buis)*
€ 27,30
(excl. BTW)
€ 33,05
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 5 - 19 | € 5,46 |
| 20 - 49 | € 5,11 |
| 50 - 99 | € 4,42 |
| 100 + | € 4,23 |
*prijsindicatie
- RS-stocknr.:
- 194-057P
- Fabrikantnummer:
- IXFP10N80P
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-220 | |
| Series | HiperFET, Polar | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.1 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.83mm | |
| Typical Gate Charge @ Vgs | 40 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.66mm | |
| Transistor Material | Si | |
| Height | 9.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-220 | ||
Series HiperFET, Polar | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.83mm | ||
Typical Gate Charge @ Vgs 40 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 10.66mm | ||
Transistor Material Si | ||
Height 9.15mm | ||
Minimum Operating Temperature -55 °C | ||