STMicroelectronics SCT Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 3-Pin Hip-247

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RS-stocknr.:
215-073
Fabrikantnummer:
SCT025W120G3AG
Fabrikant:
STMicroelectronics
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STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

56A

Maximum Drain Source Voltage Vds

1200V

Package Type

Hip-247

Series

SCT

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

27mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Power Dissipation Pd

388W

Typical Gate Charge Qg @ Vgs

73nC

Maximum Operating Temperature

200°C

Length

34.8mm

Standards/Approvals

RoHS

Width

15.6 mm

Height

5mm

Automotive Standard

AEC-Q101

The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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