STMicroelectronics SCT Type N-Channel MOSFET, 56 A, 1200 V Enhancement, 3-Pin Hip-247
- RS-stocknr.:
- 215-073
- Fabrikantnummer:
- SCT025W120G3AG
- Fabrikant:
- STMicroelectronics
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€ 27,13
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€ 32,83
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- Plus verzending 30 stuk(s) vanaf 16 februari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 27,13 |
*prijsindicatie
- RS-stocknr.:
- 215-073
- Fabrikantnummer:
- SCT025W120G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | Hip-247 | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 200°C | |
| Height | 5mm | |
| Standards/Approvals | RoHS | |
| Width | 15.6 mm | |
| Length | 34.8mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type Hip-247 | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 200°C | ||
Height 5mm | ||
Standards/Approvals RoHS | ||
Width 15.6 mm | ||
Length 34.8mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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