STMicroelectronics SCT N-Channel MOSFET, 56 A, 1.2 kV Enhancement, 3-Pin Hip-247 SCT025W120G3AG
- RS-stocknr.:
- 215-073
- Fabrikantnummer:
- SCT025W120G3AG
- Fabrikant:
- STMicroelectronics
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|---|---|
| 1 - 9 | € 17,08 |
| 10 - 99 | € 16,72 |
| 100 - 599 | € 16,51 |
| 600 + | € 16,31 |
*prijsindicatie
- RS-stocknr.:
- 215-073
- Fabrikantnummer:
- SCT025W120G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 56A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | SCT | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 27mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Maximum Gate Source Voltage Vgs | 22V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 388W | |
| Maximum Operating Temperature | 200°C | |
| Length | 34.8mm | |
| Standards/Approvals | RoHS | |
| Height | 5mm | |
| Width | 15.6mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 56A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series SCT | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 27mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Maximum Gate Source Voltage Vgs 22V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 388W | ||
Maximum Operating Temperature 200°C | ||
Length 34.8mm | ||
Standards/Approvals RoHS | ||
Height 5mm | ||
Width 15.6mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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