STMicroelectronics SCT Type N-Channel MOSFET, 60 A, 1200 V Enhancement, 3-Pin Hip-247

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Subtotaal (1 tube van 30 eenheden)*

€ 657,84

(excl. BTW)

€ 795,99

(incl. BTW)

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  • Plus verzending 240 stuk(s) vanaf 30 december 2025
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30 +€ 21,928€ 657,84

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RS-stocknr.:
239-5529
Fabrikantnummer:
SCTW60N120G2
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

60A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

Hip-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

73mΩ

Channel Mode

Enhancement

Forward Voltage Vf

3V

Maximum Gate Source Voltage Vgs

18 V

Maximum Power Dissipation Pd

389W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

94nC

Maximum Operating Temperature

200°C

Height

5mm

Width

15.6 mm

Length

34.8mm

Standards/Approvals

UL

Automotive Standard

AEC-Q101

The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. It can be used in Switching mode power supply, DC-DC converters and Industrial motor control.

Very fast and robust intrinsic body diode

Extremely low gate charge and input capacitance

Very high operating junction temperature capability

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