STMicroelectronics SCT Type N-Channel Power MOSFET, 30 A, 1200 V Enhancement, 7-Pin HU3PAK SCT070HU120G3AG

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€ 9.485,40

(excl. BTW)

€ 11.477,40

(incl. BTW)

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RS-stocknr.:
215-241
Fabrikantnummer:
SCT070HU120G3AG
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

Power MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Package Type

HU3PAK

Mount Type

Surface

Pin Count

7

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

23W

Typical Gate Charge Qg @ Vgs

37nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

22 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Length

18.58mm

Width

14 mm

Height

3.5mm

Automotive Standard

AEC-Q101

Land van herkomst:
JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

High speed switching performances

Very fast and robust intrinsic body diode

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