STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 7-Pin H2PAK-7
- RS-stocknr.:
- 215-232
- Fabrikantnummer:
- SCT040H120G3AG
- Fabrikant:
- STMicroelectronics
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€ 13,43
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€ 16,25
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|---|---|
| 1 - 9 | € 13,43 |
| 10 - 99 | € 12,08 |
| 100 + | € 11,15 |
*prijsindicatie
- RS-stocknr.:
- 215-232
- Fabrikantnummer:
- SCT040H120G3AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | H2PAK-7 | |
| Series | SCT | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 2.6V | |
| Typical Gate Charge Qg @ Vgs | 54nC | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.8mm | |
| Standards/Approvals | AEC-Q101, RoHS | |
| Length | 15.25mm | |
| Width | 10.4 mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type H2PAK-7 | ||
Series SCT | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 2.6V | ||
Typical Gate Charge Qg @ Vgs 54nC | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 4.8mm | ||
Standards/Approvals AEC-Q101, RoHS | ||
Length 15.25mm | ||
Width 10.4 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
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