STMicroelectronics SCT Type N-Channel MOSFET, 30 A, 1200 V Enhancement, 4-Pin SCT070W120G3-4AG

Bekijk alle MOSFETs

Subtotaal (1 tube van 30 eenheden)*

€ 432,09

(excl. BTW)

€ 522,84

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 30 stuk(s) vanaf 30 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per tube*
30 +€ 14,403€ 432,09

*prijsindicatie

RS-stocknr.:
215-244
Fabrikantnummer:
SCT070W120G3-4AG
Fabrikant:
STMicroelectronics
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

1200V

Series

SCT

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

63mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

41nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

-10 to 22 V

Maximum Power Dissipation Pd

236W

Maximum Operating Temperature

200°C

Standards/Approvals

AEC-Q101

Automotive Standard

AEC-Q101

Land van herkomst:
CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.

Extremely low gate charge and input capacitance

Very fast and robust intrinsic body diode

Gerelateerde Links