STMicroelectronics SCT Type N-Channel MOSFET, 40 A, 1200 V Enhancement, 4-Pin SCT040W120G3-4AG
- RS-stocknr.:
- 482-974
- Fabrikantnummer:
- SCT040W120G3-4AG
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 20,59
(excl. BTW)
€ 24,91
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 20 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 20,59 |
| 5 + | € 19,97 |
*prijsindicatie
- RS-stocknr.:
- 482-974
- Fabrikantnummer:
- SCT040W120G3-4AG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Output Power | 312W | |
| Series | SCT | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 200°C | |
| Height | 5mm | |
| Length | 21mm | |
| Width | 15.8 mm | |
| Standards/Approvals | AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Output Power 312W | ||
Series SCT | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 200°C | ||
Height 5mm | ||
Length 21mm | ||
Width 15.8 mm | ||
Standards/Approvals AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
Gerelateerde Links
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT025W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT015W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT070W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin SCT020W120G3-4AG
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin Hip-247-4 SCT040W120G3-4
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin
- STMicroelectronics SCT Type N-Channel MOSFET 1200 V Enhancement, 4-Pin
