Nexperia PSM Type N-Channel MOSFET, 66 A, 30 V Enhancement, 5-Pin LFPAK PSMN6R1-30YLDX
- RS-stocknr.:
- 219-439
- Fabrikantnummer:
- PSMN6R1-30YLDX
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Subtotaal (1 rol van 1 eenheid)*
€ 0,48
(excl. BTW)
€ 0,58
(incl. BTW)
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- Plus verzending 497 stuk(s) vanaf 29 december 2025
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Rol(len) | Per rol |
|---|---|
| 1 - 9 | € 0,48 |
| 10 - 99 | € 0,43 |
| 100 - 499 | € 0,41 |
| 500 - 999 | € 0,37 |
| 1000 + | € 0,34 |
*prijsindicatie
- RS-stocknr.:
- 219-439
- Fabrikantnummer:
- PSMN6R1-30YLDX
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 66A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 8.35mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 47W | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 66A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 8.35mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 47W | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package
Qualified to 175 °C
Superfast switching with soft recovery
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