Nexperia PSM Type N-Channel MOSFET, 210 A, 100 V Enhancement, 5-Pin LFPAK PSMN2R9-100SSEJ

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RS-stocknr.:
219-452
Fabrikantnummer:
PSMN2R9-100SSEJ
Fabrikant:
Nexperia
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Merk

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

210A

Maximum Drain Source Voltage Vds

100V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

2.9mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

341W

Typical Gate Charge Qg @ Vgs

125nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
MY
The Nexperia N-Channel MOSFET features very low RDS(on) and enhanced safe operating area performance in a high-reliability copper-clip LFPAK88 package. It is optimized for hot-swap controllers, capable of withstanding high inrush currents and minimizing I²R losses for improved efficiency. Applications include hot-swap, load switching, soft start, and e-fuse.

SOA for superior linear mode operation

LFPAK88 package for applications that demand the highest performance

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