Nexperia Type N-Channel MOSFET, 100 A, 60 V Enhancement, 5-Pin LFPAK PSMN5R5-60YS,115
- RS-stocknr.:
- 219-492
- Fabrikantnummer:
- PSMN5R5-60YS,115
- Fabrikant:
- Nexperia
Informatie over voorraden is momenteel niet toegankelijk
- RS-stocknr.:
- 219-492
- Fabrikantnummer:
- PSMN5R5-60YS,115
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 8.3mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Power Dissipation Pd | 130W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 8.3mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Power Dissipation Pd 130W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 5mm | ||
Automotive Standard No | ||
The Nexperia N-Channel MOSFET is housed in an LFPAK package and qualified to 175°C. It is designed for a wide range of industrial, communications, and domestic applications. Key uses include motor control, server power supplies, DC-to-DC converters, lithium-ion battery protection and load switching.
Advanced TrenchMOS provides low RDSon and low gate charge
High efficiency in switching power converters
Improved mechanical and thermal characteristics
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