ROHM RS6 Type N-Channel MOSFET, 135 A, 80 V Enhancement, 8-Pin HSOP-8 RS6N120BHTB1
- RS-stocknr.:
- 264-701
- Fabrikantnummer:
- RS6N120BHTB1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 8,45
(excl. BTW)
€ 10,20
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 100 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,69 | € 8,45 |
| 50 - 95 | € 1,608 | € 8,04 |
| 100 - 495 | € 1,488 | € 7,44 |
| 500 - 995 | € 1,37 | € 6,85 |
| 1000 + | € 1,32 | € 6,60 |
*prijsindicatie
- RS-stocknr.:
- 264-701
- Fabrikantnummer:
- RS6N120BHTB1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 135A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | HSOP-8 | |
| Series | RS6 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 3.3mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 53nC | |
| Maximum Power Dissipation Pd | 104W | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 135A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type HSOP-8 | ||
Series RS6 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 3.3mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 53nC | ||
Maximum Power Dissipation Pd 104W | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM power MOSFET with low-on resistance and high power package, suitable for switching.
Low on-resistance
High power package (HSOP8)
Pb-free plating; RoHS compliant
Halogen free
100% Rg and UIS tested
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