ROHM RF9 Type N-Channel MOSFET, 12 A, 40 V Enhancement, 7-Pin DFN RF9G120BKFRATCR
- RS-stocknr.:
- 265-421
- Fabrikantnummer:
- RF9G120BKFRATCR
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 5,83
(excl. BTW)
€ 7,05
(incl. BTW)
Voeg 140 eenheden toe voor gratis bezorging
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,583 | € 5,83 |
| 100 - 240 | € 0,553 | € 5,53 |
| 250 - 490 | € 0,512 | € 5,12 |
| 500 - 990 | € 0,472 | € 4,72 |
| 1000 + | € 0,455 | € 4,55 |
*prijsindicatie
- RS-stocknr.:
- 265-421
- Fabrikantnummer:
- RF9G120BKFRATCR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | DFN | |
| Series | RF9 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 17.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Power Dissipation Pd | 23W | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type DFN | ||
Series RF9 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 17.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Power Dissipation Pd 23W | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive grade MOSFET is AEC-Q101 qualified, making it an excellent choice for Advanced Driver Assistance Systems, infotainment, lighting, and body applications. Its robust design ensures reliable performance in critical automotive environments.
Pb free lead plating
RoHS compliant
High power small mould package
Low on resistance
WettableFlank
Gerelateerde Links
- ROHM RF9 Type P-Channel MOSFET 40 V Enhancement, 7-Pin DFN RF9G120BJFRATCR
- ROHM RF9 Type P-Channel MOSFET 60 V Enhancement, 7-Pin DFN RF9L120BJFRATCR
- ROHM Dual 2 Type N 7 A 9-Pin DFN
- ROHM Dual 2 Type N 7 A 9-Pin DFN HS8MA2TCR1
- ROHM Dual 2 Type P-Channel MOSFET 40 V Enhancement, 7-Pin DFN UT6JB5TCR
- ROHM Dual 2 Type P-Channel MOSFET 60 V Enhancement, 7-Pin DFN UT6JC5TCR
- Nexperia PMPB20EN Type N-Channel MOSFET 30 V Enhancement, 8-Pin DFN
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263