ROHM RF9 Type N-Channel MOSFET, 12 A, 40 V Enhancement, 7-Pin DFN RF9G120BKFRATCR
- RS-stocknr.:
- 265-421
- Fabrikantnummer:
- RF9G120BKFRATCR
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 5,83
(excl. BTW)
€ 7,05
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,583 | € 5,83 |
| 100 - 240 | € 0,553 | € 5,53 |
| 250 - 490 | € 0,512 | € 5,12 |
| 500 - 990 | € 0,472 | € 4,72 |
| 1000 + | € 0,455 | € 4,55 |
*prijsindicatie
- RS-stocknr.:
- 265-421
- Fabrikantnummer:
- RF9G120BKFRATCR
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | RF9 | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 17.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 8.5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 23W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series RF9 | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 17.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 8.5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 23W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The ROHM Automotive grade MOSFET is AEC-Q101 qualified, making it an excellent choice for Advanced Driver Assistance Systems, infotainment, lighting, and body applications. Its robust design ensures reliable performance in critical automotive environments.
Pb free lead plating
RoHS compliant
High power small mould package
Low on resistance
WettableFlank
Gerelateerde Links
- ROHM RF9 Type P-Channel MOSFET 40 V Enhancement, 7-Pin DFN RF9G120BJFRATCR
- ROHM RF9 Type P-Channel MOSFET 60 V Enhancement, 7-Pin DFN RF9L120BJFRATCR
- ROHM Dual 2 Type N 7 A 9-Pin DFN
- ROHM Dual 2 Type N 7 A 9-Pin DFN HS8MA2TCR1
- ROHM Dual 2 Type P-Channel MOSFET 40 V Enhancement, 7-Pin DFN UT6JB5TCR
- ROHM Dual 2 Type P-Channel MOSFET 60 V Enhancement, 7-Pin DFN UT6JC5TCR
- Nexperia PMPB20EN Type N-Channel MOSFET 30 V Enhancement, 8-Pin DFN
- ROHM Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-263