onsemi NXH Type N-Channel MOSFET, 76 A, 40 V Enhancement, 56-Pin Power 56 FDMS8333LN
- RS-stocknr.:
- 277-063
- Fabrikantnummer:
- FDMS8333LN
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 rol van 10 eenheden)*
€ 6,87
(excl. BTW)
€ 8,31
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 10 - 90 | € 0,687 | € 6,87 |
| 100 - 240 | € 0,653 | € 6,53 |
| 250 - 490 | € 0,605 | € 6,05 |
| 500 - 990 | € 0,557 | € 5,57 |
| 1000 + | € 0,536 | € 5,36 |
*prijsindicatie
- RS-stocknr.:
- 277-063
- Fabrikantnummer:
- FDMS8333LN
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 76A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | NXH | |
| Package Type | Power 56 | |
| Mount Type | Surface | |
| Pin Count | 56 | |
| Maximum Drain Source Resistance Rds | 4.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 69W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 46nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.15mm | |
| Width | 5.1 mm | |
| Height | 1.1mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 76A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series NXH | ||
Package Type Power 56 | ||
Mount Type Surface | ||
Pin Count 56 | ||
Maximum Drain Source Resistance Rds 4.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 69W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 46nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.15mm | ||
Width 5.1 mm | ||
Height 1.1mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Land van herkomst:
- PH
The ON Semiconductor N Channel MOSFET has been designed specifically to improve the overall efficiency and to minimise switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimised for low gate charge, low RDS(ON), fast switching speed and body and body diode reverse recovery performance.
100% UIL tested
MSL 1 robust package design
RoHS compliant
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