Infineon CoolSiC MOSFET 650 V G1 Type N-Channel MOSFET, 50 A, 650 V Enhancement, 8-Pin PG-HSOF-8 IMT65R048M1HXUMA1
- RS-stocknr.:
- 284-723
- Fabrikantnummer:
- IMT65R048M1HXUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 12,48
(excl. BTW)
€ 15,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Plus verzending 100 stuk(s) vanaf 29 december 2025
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 12,48 |
| 10 - 99 | € 11,24 |
| 100 + | € 10,36 |
*prijsindicatie
- RS-stocknr.:
- 284-723
- Fabrikantnummer:
- IMT65R048M1HXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-HSOF-8 | |
| Series | CoolSiC MOSFET 650 V G1 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 64mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 227W | |
| Typical Gate Charge Qg @ Vgs | 33nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-HSOF-8 | ||
Series CoolSiC MOSFET 650 V G1 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 64mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 227W | ||
Typical Gate Charge Qg @ Vgs 33nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon CoolSiC MOSFET 650V G1 epitomises innovation in semiconductor technology. This high performance device leverages robust silicon carbide technology, optimising efficiency and reliability for applications requiring superior thermal performance and stability. Designed specifically for demanding environments, it excels in high temperature operations while simplifying system designs. With its Advanced features, the MOSFET ensures that users can achieve excellent power density and conserve space, making it an Ideal choice for a range of applications including electric vehicle charging infrastructure, solar inverters, and efficient power supplies. The CoolSiC MOSFET 650V G1 is more than just a component; it embodies a commitment to performance and reliability, perfect for modern electronic solutions.
Optimised for high frequency applications
Robust thermal performance for harsh environments
Enhanced reliability for extended life
Low switching losses improve efficiency
Compact design reduces system footprint
Industry leading avalanche capability for fault tolerance
User friendly integration with standard drivers
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