Infineon OptiMOS Type N-Channel MOSFET, 99 A, 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1

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€ 11,51

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€ 13,925

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Verpakkingsopties
RS-stocknr.:
284-752
Fabrikantnummer:
IQE022N06LM5CGSCATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

99A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

PG-TSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.6mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

100W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

19nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS, IEC61249-2-21, JEDEC

Automotive Standard

No

The Infineon MOSFET is a power transistor is engineered for high performance in switch mode power supplies, ensuring reliability across demanding applications. Designed within the OptiMOS 5 series, it delivers exceptional efficiency and low on resistance, making it an Ideal choice for synchronous rectification. With its Pb free and RoHS compliant construction, the product not only meets the latest environmental standards but also assures robust performance under varying conditions. This transistor features Advanced thermal management and is avalanche rated, ensuring safer operation and durability in critical settings. Its logic level drive capability allows for seamless integration into a wide range of electronic systems, further exemplifying its versatility and performance stability.

Optimised for high efficiency power conversion

Low on resistance for enhanced performance

Pb free design for environmental compliance

Avalanche tested for increased reliability

Logic level drive simplifies low voltage interfacing

Thermal resistance for efficient heat management

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