Infineon OptiMOS-TM6 Type N-Channel MOSFET, 656 A, 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1

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RS-stocknr.:
348-840
Fabrikantnummer:
IQFH36N04NM6ATMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

656A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS-TM6

Package Type

PG-TSON-12

Mount Type

Surface

Pin Count

12

Maximum Drain Source Resistance Rds

0.36mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

300W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

No

Land van herkomst:
MY
The Infineon 40 V normal level power MOSFET comes in our latest innovative, compact clip based PQFN 8x6 mm2 package enabling very high currents and power levels. The part offers current industry-best RDS(on) of 0.36 mΩ combined with outstanding thermal performance.

Minimized conduction losses

Fast switching

Reduced voltage overshoot

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