Infineon OptiMOS N channel-Channel Power MOSFET, 394 A, 60 V Enhancement, 12-Pin PG-TSON-12 IQFH86N06NM5ATMA1
- RS-stocknr.:
- 762-985
- Fabrikantnummer:
- IQFH86N06NM5ATMA1
- Fabrikant:
- Infineon
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 3,84
(excl. BTW)
€ 4,65
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 3,84 |
| 10 - 49 | € 3,11 |
| 50 - 99 | € 2,38 |
| 100 + | € 1,91 |
*prijsindicatie
- RS-stocknr.:
- 762-985
- Fabrikantnummer:
- IQFH86N06NM5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 394A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | OptiMOS | |
| Package Type | PG-TSON-12 | |
| Mount Type | Surface Mount | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 0.86mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 137nC | |
| Maximum Power Dissipation Pd | 250W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 8mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 394A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series OptiMOS | ||
Package Type PG-TSON-12 | ||
Mount Type Surface Mount | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 0.86mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 137nC | ||
Maximum Power Dissipation Pd 250W | ||
Forward Voltage Vf 1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 8mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 5Power-Transistor,60V optimized for low voltage drives, battery powered and synchronous rectification application. Fully qualified according to JEDEC for industrial applications.
100% avalanche tested
Superior thermal resistance
N-channel
Pb-free lead plating, RoHS compliant
Gerelateerde Links
- Infineon OptiMOS N channel-Channel Power MOSFET 60 V Enhancement, 12-Pin PG-TSON-12 IQFH68N06NM5ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 60 V Enhancement, 12-Pin PG-TSON-12 IQFH61N06NM5ATMA1
- Infineon OptiMOS N channel-Channel Power MOSFET 60 V Enhancement, 12-Pin PG-TSON-12 IQFH99N06NM5ATMA1
- Infineon OptiMOS-TM6 Type N-Channel MOSFET 40 V Enhancement, 12-Pin PG-TSON-12 IQFH36N04NM6ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE022N06LM5CGSCATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 8-Pin PG-TSON-8 IQE046N08LM5ATMA1
- Infineon OptiMOS 6 Power Transistor 1 Type N-Channel MOSFET 8-Pin PG-TSON-8 ISC030N12NM6ATMA1
- Infineon IQF Type N-Channel Power Transistor 40 V Enhancement, 12-Pin PG-TSON-12 IQFH55N04NM6ATMA1
