Infineon OptiMOS Power Transistor SiC P-Channel MOSFET, 5.1 A, 150 V, 8-Pin PG-TSDSON-8 FL ISZ75DP15LMATMA1

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RS-stocknr.:
284-803
Fabrikantnummer:
ISZ75DP15LMATMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

P

Maximum Continuous Drain Current

5.1 A

Maximum Drain Source Voltage

150 V

Series

OptiMOS Power Transistor

Package Type

PG-TSDSON-8 FL

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is a cutting edge power transistor designed for high performance applications. Engineered with advanced OptiMOS technology, this device delivers exceptional efficiency while operating at a maximum voltage of 150 V. Its low on resistance attribute ensures minimised energy losses, making it ideal for applications requiring reliable power management. The product is fully qualified according to JEDEC standards, guaranteeing its suitability for demanding industrial environments. With robust thermal characteristics and the ability to withstand high continuous drain current, it exemplifies reliability and durability in diverse conditions.

P Channel design for versatile power management
Enhanced thermal resistance for reliability
100% avalanche tested for safety
Logic level compatibility simplifies design
Pb free lead plating for eco friendly practices
Halogen free construction meets regulations
Wide operating temperature range for flexibility
Compact PG TSDSON 8 package for easy integration

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