Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 43 A, 650 V, 8-Pin PG-HSOF-8 IPT65R060CFD7XTMA1

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RS-stocknr.:
284-903
Fabrikantnummer:
IPT65R060CFD7XTMA1
Fabrikant:
Infineon
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Merk

Infineon

Channel Type

N

Maximum Continuous Drain Current

43 A

Maximum Drain Source Voltage

650 V

Series

650V CoolMOS CFD7 SJ Power Device

Package Type

PG-HSOF-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is highly efficient power device boasts cutting edge technology designed for demanding applications. The latest iteration of the 650V CoolMOS CFD7 features exceptional switching performance coupled with outstanding thermal behaviour, making it the ideal choice for resonant switching topologies like LLC and phase shift full bridge. As a successor to the CoolMOS CFD2, it promises superior efficiency and reliability in industrial applications ranging from servers to EV charging solutions. This device empowers engineers to push the boundaries of power density and thermal management in their designs, ensuring robust performance even under high temperature conditions.

Ultra fast body diode enhances efficiency
Optimised for high power density
Best in class RDS(on) minimises loss
Consistent performance across temperatures
Exceptional light load efficiency
Increased safety margins for high voltage
Fully JEDEC qualified

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