Infineon OptiMOS Type N-Channel MOSFET, 637 A, 40 V Enhancement, 9-Pin PG-TTFN-9 IQDH45N04LM6CGATMA1

Bekijk alle MOSFETs
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
RS-stocknr.:
285-038
Fabrikantnummer:
IQDH45N04LM6CGATMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

637A

Maximum Drain Source Voltage Vds

40V

Series

OptiMOS

Package Type

PG-TTFN-9

Mount Type

Surface

Pin Count

9

Maximum Drain Source Resistance Rds

0.45mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

333W

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an Advanced power transistor excels in high performance applications, delivering exceptional efficiency and reliability. Designed within the OptiMOS 6 series, it showcases impressive electrical characteristics, setting a new standard for MOSFET technology. With 100% avalanche testing, users can Trust in its robustness, whether used in power management or motor control applications. Additionally, its RoHS compliance and halogen free attributes ensure adherence to strict environmental standards, making it a smart choice for eco conscious projects.

N channel design for logic level applications

Outstanding thermal resistance for heat dissipation

Engineered for Rapid switching efficiency

Avalanche rated for reliability under stress

Pb free and RoHS compliant for eco friendliness

Halogen free construction meets safety standards

JEDEC certified for industrial performance

Gerelateerde Links