Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET, 62 A, 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ106N12LM6ATMA1
- RS-stocknr.:
- 285-061
- Fabrikantnummer:
- ISZ106N12LM6ATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 5 eenheden)*
€ 7,13
(excl. BTW)
€ 8,625
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 08 juli 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 1,426 | € 7,13 |
| 50 - 95 | € 1,354 | € 6,77 |
| 100 - 495 | € 1,252 | € 6,26 |
| 500 - 995 | € 1,154 | € 5,77 |
| 1000 + | € 1,112 | € 5,56 |
*prijsindicatie
- RS-stocknr.:
- 285-061
- Fabrikantnummer:
- ISZ106N12LM6ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 62A | |
| Maximum Drain Source Voltage Vds | 120V | |
| Series | OptiMOS 6 Power Transistor | |
| Package Type | PG-TSDSON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 10.6mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 94W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 62A | ||
Maximum Drain Source Voltage Vds 120V | ||
Series OptiMOS 6 Power Transistor | ||
Package Type PG-TSDSON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 10.6mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 94W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
The Infineon MOSFET is power transistor stands out in high performance applications, designed to cater to the needs of modern electronic systems. Its Advanced N channel technology delivers remarkable efficiency and reliability, making it Ideal for high frequency switching operations. Crafted for professionals in the field, this product combines low on resistance with superior gate charge characteristics. This makes it a suitable choice for synchronous rectification and industrial applications.
Very low on resistance enhances efficiency
Optimised for high frequency switching
High avalanche energy rating for reliability
Excellent gate charge for quick response
Pb free lead plating for compliance
Operates from 55°C to 175°C
MSL 1 classified for manufacturing ease
Gerelateerde Links
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ106N12LM6ATMA1
- Infineon OptiMOS 6 Power Transistor Type N-Channel MOSFET 120 V Enhancement, 8-Pin PG-TSDSON-8 ISZ330N12LM6ATMA1
- Infineon OptiMOS Power Transistor Type P-Channel MOSFET 60 V Enhancement, 8-Pin PG-TSDSON-8FL ISZ810P06LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ56DP15LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 100 V, 8-Pin PG-TSDSON-8 FL ISZ24DP10LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ75DP15LMATMA1
- Infineon OptiMOS Power Transistor SiC P-Channel MOSFET 150 V, 8-Pin PG-TSDSON-8 FL ISZ15EP15LMATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 8-Pin PG-TSDSON-8FL