Vishay Single IRLD 1 N-Channel MOSFET, 1 A, 100 V Enhancement, 4-Pin HVMDIP IRLD110PBF
- RS-stocknr.:
- 301-338
- Fabrikantnummer:
- IRLD110PBF
- Fabrikant:
- Vishay
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 301-338
- Fabrikantnummer:
- IRLD110PBF
- Fabrikant:
- Vishay
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Vishay | |
| Transistor Configuration | Single | |
| Series | IRLD | |
| Number of Elements per Chip | 1 | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 1 A | |
| Maximum Drain Source Voltage (Vds) | 100 V | |
| Channel Mode | Enhancement | |
| Pin Count | 4 | |
| Package Type | HVMDIP | |
| Automotive Standard | No | |
| Forward Voltage (Vf) | 2.5 V | |
| Height | 3.37 mm | |
| Length | 5 mm | |
| Maximum Drain Source Resistance (Rds) | 540 mΩ | |
| Maximum Gate Source Voltage (Vgs) | -10 V, +10 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 1.3 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Through Hole, Through Hole | |
| Standards/Approvals | No | |
| Typical Gate Charge (Qg) @ Vgs | 6.1 nC | |
| Width | 6.29 mm | |
| Alles selecteren | ||
|---|---|---|
Merk Vishay | ||
Transistor Configuration Single | ||
Series IRLD | ||
Number of Elements per Chip 1 | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 1 A | ||
Maximum Drain Source Voltage (Vds) 100 V | ||
Channel Mode Enhancement | ||
Pin Count 4 | ||
Package Type HVMDIP | ||
Automotive Standard No | ||
Forward Voltage (Vf) 2.5 V | ||
Height 3.37 mm | ||
Length 5 mm | ||
Maximum Drain Source Resistance (Rds) 540 mΩ | ||
Maximum Gate Source Voltage (Vgs) -10 V, +10 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 1.3 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Through Hole, Through Hole | ||
Standards/Approvals No | ||
Typical Gate Charge (Qg) @ Vgs 6.1 nC | ||
Width 6.29 mm | ||
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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