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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	45A
	Maximum Drain Source Voltage Vds	1700V
	Series	EliteSiC
	Package Type	TO-247-4L
	Pin Count	4
	Maximum Drain Source Resistance Rds	76mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	105nC
	Maximum Gate Source Voltage Vgs	25 V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	333W
	Forward Voltage Vf	4.3V
	Maximum Operating Temperature	175°C
	Standards/Approvals	Pb-Free and RoHS
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 45A
	Maximum Drain Source Voltage Vds 1700V
	Series EliteSiC
	Package Type TO-247-4L
	Pin Count 4
	Maximum Drain Source Resistance Rds 76mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 105nC
	Maximum Gate Source Voltage Vgs 25 V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 333W
	Forward Voltage Vf 4.3V
	Maximum Operating Temperature 175°C
	Standards/Approvals Pb-Free and RoHS
	Automotive Standard No

Datasheet - NVH4L050N170M1

Land van herkomst:: CN

The ON Semiconductor High-voltage power MOSFET designed for efficient switching applications, ensuring low conduction losses and reliable operation. Its advanced packaging provides excellent thermal performance, making it suitable for demanding environments. This device offers enhanced power handling capabilities with optimized electrical characteristics.

TO 247 4L package

RoHS compliant

Pb free

onsemi EliteSiC Type N-Channel MOSFET, 45 A, 1700 V Enhancement, 4-Pin TO-247-4L NVH4L050N170M1

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