Infineon OptiMOS 5 Type N, Type N-Channel MOSFET, 447 A, 60 V Enhancement, 9-Pin PG-WHTFN-9 IQDH88N06LM5CGSCATMA1
- RS-stocknr.:
- 348-881
- Fabrikantnummer:
- IQDH88N06LM5CGSCATMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 10,21
(excl. BTW)
€ 12,354
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 5,105 | € 10,21 |
| 20 - 198 | € 4,60 | € 9,20 |
| 200 - 998 | € 4,24 | € 8,48 |
| 1000 - 1998 | € 3,93 | € 7,86 |
| 2000 + | € 3,525 | € 7,05 |
*prijsindicatie
- RS-stocknr.:
- 348-881
- Fabrikantnummer:
- IQDH88N06LM5CGSCATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 447A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-WHTFN-9 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface, Surface Mount | |
| Pin Count | 9 | |
| Maximum Drain Source Resistance Rds | 0.86mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 333W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 447A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-WHTFN-9 | ||
Series OptiMOS 5 | ||
Mount Type Surface, Surface Mount | ||
Pin Count 9 | ||
Maximum Drain Source Resistance Rds 0.86mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 333W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon MOSFET comes with a low RDS(on) of 0.86 mOhm combined with outstanding thermal performance for easy power loss management. The Centre-Gate footprint is optimized for parallelization.
Reduced voltage overshoot
Increased maximum current capability
Fast switching
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