Infineon ISA Dual N-Channel Power Transistor, 7.9 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA250250N04LMDSXTMA1

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€ 8,64

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€ 10,46

(incl. BTW)

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500 - 980€ 0,38€ 7,60
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2000 +€ 0,337€ 6,74

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RS-stocknr.:
348-910
Fabrikantnummer:
ISA250250N04LMDSXTMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

Power Transistor

Channel Type

Dual N

Maximum Continuous Drain Current Id

7.9A

Maximum Drain Source Voltage Vds

40V

Series

ISA

Package Type

PG-DSO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

25mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1V

Typical Gate Charge Qg @ Vgs

3.8nC

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Standards/Approvals

IEC61249-2-21, JEDEC, RoHS

Automotive Standard

No

Land van herkomst:
CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

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