Infineon ISA Type N, Type P-Channel MOSFET, 10.2 A, 30 V Enhancement, 8-Pin PG-DSO-8 ISA150233C03LMDSXTMA

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RS-stocknr.:
348-906
Fabrikantnummer:
ISA150233C03LMDSXTMA
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N, Type P

Maximum Continuous Drain Current Id

10.2A

Maximum Drain Source Voltage Vds

30V

Series

ISA

Package Type

PG-DSO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

23.3mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Forward Voltage Vf

1V

Maximum Power Dissipation Pd

2.5W

Typical Gate Charge Qg @ Vgs

14nC

Maximum Operating Temperature

150°C

Width

5 mm

Height

1.75mm

Standards/Approvals

IEC61249‐2‐21, JEDEC

Length

6.2mm

Automotive Standard

No

Land van herkomst:
CN
The Infineon OptiMOS 3 Power Transistors available in complementary N and P channel configurations, are designed for high efficiency switching applications. These MOSFETs feature very low on resistance (RDS(on)), which minimizes conduction losses and enhances overall system performance. Additionally, they offer superior thermal resistance, ensuring better heat dissipation and reliability in demanding applications. These characteristics make them ideal for various power management and energy efficient designs.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

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