Infineon ISA Dual N-Channel MOSFET, 9.6 A, 40 V Enhancement, 8-Pin PG-DSO-8 ISA170170N04LMDSXTMA1

Bekijk alle MOSFETs
Bulkkorting beschikbaar

Subtotaal (1 verpakking van 20 eenheden)*

€ 10,52

(excl. BTW)

€ 12,72

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • Plus verzending 3.980 stuk(s) vanaf 29 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
Per verpakking*
20 - 180€ 0,526€ 10,52
200 - 480€ 0,50€ 10,00
500 - 980€ 0,463€ 9,26
1000 - 1980€ 0,426€ 8,52
2000 +€ 0,41€ 8,20

*prijsindicatie

RS-stocknr.:
348-912
Fabrikantnummer:
ISA170170N04LMDSXTMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Dual N

Maximum Continuous Drain Current Id

9.6A

Maximum Drain Source Voltage Vds

40V

Series

ISA

Package Type

PG-DSO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

17mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

6nC

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC Standard

Land van herkomst:
CN
The Infineon OptiMOS 3 Power Transistor is a dual N-channel, logic level MOSFET designed for high performance power applications. It features very low on-resistance (RDS(on)), which helps reduce conduction losses and increase overall system efficiency. Additionally, the transistor offers superior thermal resistance, ensuring better heat management and reliability in demanding conditions. This combination of features makes it ideal for applications requiring efficient power switching and thermal performance.

100% avalanche tested

Pb free lead plating and RoHS compliant

Halogen free according to IEC61249‑2‑21

Gerelateerde Links