Infineon IPD Type N-Channel MOSFET, 90 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T022S7XTMA1

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RS-stocknr.:
348-998
Fabrikantnummer:
IPDQ60T022S7XTMA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

90A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

PG-HDSOP-22

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

22mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

416W

Typical Gate Charge Qg @ Vgs

150nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

0.82V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC, JS-001, RoHS

Automotive Standard

No

Land van herkomst:
MY
The Infineon CoolMOS S7T enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7T is optimized for static switching and high current applications. The new temperature sensor enhances S7 features, allowing the best possible utilization of the power transistor.

Increased system performance

Increased system performance

More compact and more straightforward design

Lower BOM or TCO over a prolonged lifetime

More reliability and longer system lifetime

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