Infineon IPD Type N-Channel MOSFET, 113 A, 600 V Enhancement, 22-Pin PG-HDSOP-22 IPDQ60T017S7AXTMA1

Bulkkorting beschikbaar

Subtotaal (1 eenheid)*

€ 19,02

(excl. BTW)

€ 23,01

(incl. BTW)

Add to Basket
selecteer of typ hoeveelheid
Op voorraad
  • 750 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks
Per stuk
1 - 9€ 19,02
10 - 99€ 17,12
100 +€ 15,78

*prijsindicatie

RS-stocknr.:
349-196
Fabrikantnummer:
IPDQ60T017S7AXTMA1
Fabrikant:
Infineon
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren

Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

113A

Maximum Drain Source Voltage Vds

600V

Series

IPD

Package Type

PG-HDSOP-22

Mount Type

Surface

Pin Count

22

Maximum Drain Source Resistance Rds

0.017Ω

Channel Mode

Enhancement

Forward Voltage Vf

0.82V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

196nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

500W

Maximum Operating Temperature

150°C

Standards/Approvals

AEC Q101, RoHS, JEDEC

Automotive Standard

AEC-Q101

Land van herkomst:
MY
The Infineon CoolMOS S7TA enables the best price performance for low frequency switching applications. The embedded temperature sensor increases junction temperature sensing accuracy and robustness while keeping an easy and seamless implementation. CoolMOS S7TA is optimized for static switching and high current applications. The new temperature sensor enhances S7A features, allowing the best possible utilization of the power transistor.

Optimized price performance in low frequency switching applications

High pulse current capability

Seamless diagnostics at lowest system cost

Increased system performance

Minimized conduction losses

More reliability and longer system lifetime

Shock and vibration resistance

No contact arcing or bouncing

Gerelateerde Links