Infineon IPP Type N-Channel MOSFET, 70 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1

RS-stocknr.:: 349-001
Fabrikantnummer:: IPP60R037CM8XKSA1
Fabrikant:: Infineon

Infineon IPP Type N-Channel MOSFET, 70 A, 600 V Enhancement, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1

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RS-stocknr.:: 349-001
Fabrikantnummer:: IPP60R037CM8XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	70A
	Maximum Drain Source Voltage Vds	600V
	Series	IPP
	Package Type	PG-TO220-3
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	37mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	79nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	390W
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC

	Alles selecteren
	Merk Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 70A
	Maximum Drain Source Voltage Vds 600V
	Series IPP
	Package Type PG-TO220-3
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 37mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 79nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 390W
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC

Datasheet - IPP60R037CM8XKSA1

Land van herkomst:: MY

Infineon IPP Series MOSFET, 600V Drain Source Voltage, 70A Continuous Drain Current - IPP60R037CM8XKSA1

This MOSFET is a high-voltage N-channel switching transistor designed for demanding power-conversion environments. It operates across a wide temperature span and is supplied in a through-hole PG-TO220-3 package, making it suitable for robust board-mount applications where thermal management and reliable switching are required.

Features and Benefits:

• 600V rated drain voltage for high-voltage switching
• 70A continuous drain current for heavy current handling
• 37mΩ low Rds(on) to reduce conduction losses
• 390W power dissipation for sustained power applications
• 79nC gate charge enabling predictable switching behaviour

Applications

• Suitable for power supplies and converter stages
• Ideal for industrial motor drive circuits
• Used with high-voltage inverter assemblies
• Can be used for high-current switch-mode supplies

What gate voltage limits must I observe to protect the device?

The gate-to-source rating allows up to 30V

designs should include gate drives and protection that keep Vgs within this limit to prevent damage.

How does the device cope with extreme ambient temperatures during operation?

It is specified to operate from -55°C up to 150°C, permitting use in both cold-start conditions and elevated-temperature cabinets with appropriate thermal design.

What packaging and mounting considerations affect thermal performance?

The PG-TO220-3 through-hole format facilitates direct heatsink attachment and through-hole soldering for robust thermal conduction and mechanical stability.

How does the device behave in terms of channel conduction mode?

It is an enhancement-mode N-channel device, requiring a positive gate drive relative to source to switch into conduction.