Infineon IPP Type N-Channel Power Transistor, 39 A, 200 V Enhancement, 3-Pin PG-TO220-3 IPP339N20NM6AKSA1
- RS-stocknr.:
- 349-118
- Fabrikantnummer:
- IPP339N20NM6AKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 13,64
(excl. BTW)
€ 16,505
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 500 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 45 | € 2,728 | € 13,64 |
| 50 - 95 | € 2,592 | € 12,96 |
| 100 + | € 2,40 | € 12,00 |
*prijsindicatie
- RS-stocknr.:
- 349-118
- Fabrikantnummer:
- IPP339N20NM6AKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Power Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 39A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | IPP | |
| Package Type | PG-TO220-3 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 33.9mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 125W | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC for Industrial Applications | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Power Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 39A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series IPP | ||
Package Type PG-TO220-3 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 33.9mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 125W | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC for Industrial Applications | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon OptiMOS 6 Power Transistor is an N-channel, normal level MOSFET designed for high efficiency power applications. It features very low on-resistance (RDS(on)), ensuring reduced conduction losses. The MOSFET also boasts an excellent gate charge x RDS(on) product (FOM) for superior switching performance and very low reverse recovery charge (Qrr) for efficient operation. It is 100% avalanche tested, ensuring robustness, and can operate at a high temperature of 175°C, making it reliable even in demanding environments.
Optimized for motor drives and battery powered applications
Pb free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21
MSL 1 classified according to J-STD-020
Gerelateerde Links
- Infineon IPP N-Channel MOSFET 200 V, 3-Pin PG-TO220-3 IPP069N20NM6AKSA1
- Infineon IPP N-Channel MOSFET 600 V, 3-Pin PG-TO220-3 IPP60R016CM8XKSA1
- Infineon IPP N-Channel MOSFET 135 V, 3-Pin PG-TO220-3 IPP073N13NM6AKSA1
- Infineon IPP N-Channel MOSFET 600 V, 3-Pin PG-TO220-3 IPP60R180CM8XKSA1
- Infineon IPP N-Channel MOSFET 600 V, 3-Pin PG-TO220-3 IPP60R037CM8XKSA1
- Infineon IKA15N60TXKSA1 IGBT PG-TO220-3
- Infineon IGP30N65F5XKSA1 IGBT PG-TO220-3
- Infineon IPB N-Channel MOSFET 200 V, 3-Pin PG-TO263-3 IPB339N20NM6ATMA1