Infineon IMB Type N-Channel MOSFET, 21.2 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R116M2HXTMA1
- RS-stocknr.:
- 349-104
- Fabrikantnummer:
- IMBG120R116M2HXTMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 13,30
(excl. BTW)
€ 16,10
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 6,65 | € 13,30 |
| 20 - 198 | € 5,99 | € 11,98 |
| 200 + | € 5,52 | € 11,04 |
*prijsindicatie
- RS-stocknr.:
- 349-104
- Fabrikantnummer:
- IMBG120R116M2HXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 21.2A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | IMB | |
| Package Type | PG-TO263-7 | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 307mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±25 V | |
| Typical Gate Charge Qg @ Vgs | 14.4nC | |
| Maximum Power Dissipation Pd | 123W | |
| Maximum Operating Temperature | 175°C | |
| Width | 10.2 mm | |
| Length | 15mm | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Height | 4.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 21.2A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series IMB | ||
Package Type PG-TO263-7 | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 307mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±25 V | ||
Typical Gate Charge Qg @ Vgs 14.4nC | ||
Maximum Power Dissipation Pd 123W | ||
Maximum Operating Temperature 175°C | ||
Width 10.2 mm | ||
Length 15mm | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Height 4.5mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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