Infineon IMB N-Channel MOSFET, 10.5 A, 1200 V Enhancement, 7-Pin PG-TO263-7 IMBG120R181M2HXTMA1
- RS-stocknr.:
- 349-105
- Fabrikantnummer:
- IMBG120R181M2HXTMA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 349-105
- Fabrikantnummer:
- IMBG120R181M2HXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 10.5A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | PG-TO263-7 | |
| Series | IMB | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 181.4mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 9.7nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 94W | |
| Maximum Gate Source Voltage Vgs | 25V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22, RoHS | |
| Length | 15mm | |
| Height | 4.5mm | |
| Width | 10.2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 10.5A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type PG-TO263-7 | ||
Series IMB | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 181.4mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 9.7nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 94W | ||
Maximum Gate Source Voltage Vgs 25V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22, RoHS | ||
Length 15mm | ||
Height 4.5mm | ||
Width 10.2mm | ||
Automotive Standard No | ||
- Land van herkomst:
- MY
The Infineon CoolSiC 1200 V SiC MOSFET G2 is a high performance silicon carbide MOSFET designed for superior efficiency with very low switching losses. With a short circuit withstand time of 2 μs, the device provides robust protection against fault conditions. The benchmark gate threshold voltage (VGS(th)) of 4.2 V ensures optimal switching performance, making it an excellent choice for demanding power applications that require high efficiency and reliability.
Robust body diode for hard commutation
The .XT interconnection technology for best in class thermal performance
Better energy efficiency
Cooling optimization
Higher power density
New robustness features
Highly reliable
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